Epitaxial Er-doped Y2O3 on silicon for quantum coherent devices-Reference-Cited by-同舟云学术

Epitaxial Er-doped Y2O3 on silicon for quantum coherent devices

Published:2020-03-01 Issue:3 Volume:8 Page:031111
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Singh Manish Kumar¹^ORCID,Prakash Abhinav¹²^ORCID,Wolfowicz Gary¹²^ORCID,Wen Jianguo²^ORCID,Huang Yizhong¹,Rajh Tijana²^ORCID,Awschalom David D.¹²^ORCID,Zhong Tian¹^ORCID,Guha Supratik¹²^ORCID

Affiliation:

1. Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA

2. Argonne National Laboratory, Lemont, Illinois 60439, USA

Funder

U.S. Department of Energy

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5142611

Reference44 articles.

1. The quantum internet

2. Optical quantum memory

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4. Chip-Scale Nanofabrication of Single Spins and Spin Arrays in Diamond

5. Optical charge state control of spin defects in 4H-SiC

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