Single-crystal GaN/Gd2O3/GaN heterostructure-Reference-Cited by-同舟云学术

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Single-crystal GaN/Gd2O3/GaN heterostructure

Published:2002 Issue:3 Volume:20 Page:1274
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Hong M.,Kwo J.,Chu S. N. G.,Mannaerts J. P.,Kortan A. R.,Ng H. M.,Cho A. Y.,Anselm K. A.,Lee C. M.,Chyi J. I.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrically sign-reversible topological Hall effect in a top-gated topological insulator (Bi,Sb)2Te3 grown on europium iron garnet;Physical Review B;2024-01-26

2. Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO3 Perovskite;Nanomaterials;2020-08-02

3. Rare-earth adatoms on GaN (0001);Physical Review Materials;2019-04-30

4. Growth of epitaxially stabilized, non-cubic Gd2O3 on silicon(1 1 1) substrates;Journal of Crystal Growth;2017-12

5. Hexagonal to monoclinic phase transformation in Eu2O3thin films grown on GaN (0001);Applied Physics Letters;2017-10-02

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