Exciton Localization of High-Quality ZnO/MgxZn1–xO Multiple Quantum Wells on Si (111) with a Y2O3 Buffer Layer
Author:
Affiliation:
1. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
2. Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan
Funder
Ministry of Science and Technology, Taiwan
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsanm.8b00595
Reference39 articles.
1. UV Electroluminescence Emission from ZnO Light-Emitting Diodes Grown by High-Temperature Radiofrequency Sputtering
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3. ZnO-Based Ultraviolet Photodetectors
4. Photoexcitation screening of the built-in electric field in ZnO single quantum wells
5. Saturation and beating of acoustic phonon oscillations excited near the exciton resonance of strained polar ZnO/Zn0.8Mg0.2O multiple quantum wells
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1. Barrier thickness dependence of the built-in electric field in pseudomorphic ZnO/Zn0.55Mg0.45O multi-quantum wells;Journal of Alloys and Compounds;2023-04
2. Optical anisotropy of interface-bound exciton emission in a-plane ZnO/Zn1-xMgxO MQWs with Zn1-yMgyO buffer layer;Applied Surface Science;2021-01
3. Observation of anomalous emissions of nonpolar a-plane MgZnO and ZnO epi-films based on XEOL and time-resolved XEOL in hybrid bunch mode;AIP Advances;2020-08-01
4. Photoluminescence properties of ZnO/ZnMgO multiple quantum wells under high excitation;Superlattices and Microstructures;2020-03
5. Hard X-ray nanoprobe and time-resolved XEOL to observe increasing luminescence of ZnO and GaN epitaxial structures;Applied Physics Letters;2019-10-21
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