Hard X-ray nanoprobe and time-resolved XEOL to observe increasing luminescence of ZnO and GaN epitaxial structures
Author:
Affiliation:
1. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
2. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Funder
Ministry of Science and Technology, Taiwan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5123271
Reference20 articles.
1. Origin of luminescence from porous silicon deduced by synchrotron-light-induced optical luminescence
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5. Probing the exciton-phonon coupling strengths of O-polar and Zn-polar ZnO wafer using hard X-ray excited optical luminescence
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