Study of electronic transport properties in AlGaN/AlN/GaN/AlGaN double-heterojunction transistor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5116042
Reference32 articles.
1. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
2. AlGaN/GaN HEMTs-an overview of device operation and applications
3. The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs
4. Trap state analysis in AlGaN/GaN/AlGaN double heterostructure high electron mobility transistors at high temperatures
5. Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mobility Limitations in Single- and Double-Heterostructure GaN HEMTs;IEEE Transactions on Electron Devices;2023-11
2. Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application;Japanese Journal of Applied Physics;2023-08-01
3. Analysis of Improved 2D Electron Gas Mobility in InAlN/AlN/InGaN High‐Electron‐Mobility Transistors with GaN Interlayer;physica status solidi (RRL) – Rapid Research Letters;2022-01-13
4. Electron mobility in asymmetric GaN/AlGaN quantum well transistor structure: effect of alloy disorder scattering;Physica Scripta;2021-11-15
5. Growth of AlxGa1-xN/InyGa1-yN hetero structure on AlN/sapphire templates exhibiting Shubnikov-de Haas oscillation;Journal of Crystal Growth;2021-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3