Trap state analysis in AlGaN/GaN/AlGaN double heterostructure high electron mobility transistors at high temperatures-Reference-Cited by-同舟云学术

Trap state analysis in AlGaN/GaN/AlGaN double heterostructure high electron mobility transistors at high temperatures

Published:2017-06-19 Issue:25 Volume:110 Page:252102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang WeiHang¹,Xue JunShuai¹,Zhang Li¹,Zhang Tao¹,Lin ZhiYu¹,Zhang JinCheng¹,Hao Yue¹

Affiliation:

1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China

Funder

National Key Research and Development Program of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4986776

Reference16 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. GaN Technology for Power Electronic Applications: A Review

3. Pulsed metal organic chemical vapor deposition of nearly latticed-matched InAlN/GaN/InAlN/GaN double-channel high electron mobility transistors

4. Enhanced effect of polarization on electron transport properties in AlGaN/GaN double-heterostructure field-effect transistors

5. AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors

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