Investigation on Electrical Performance Degradation Mechanism of β-Ga₂O₃ Schottky Barrier Diodes Under 3 MeV Proton Radiation-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Investigation on Electrical Performance Degradation Mechanism of β-Ga₂O₃ Schottky Barrier Diodes Under 3 MeV Proton Radiation

Published:2024-08 Issue:8 Volume:71 Page:4584-4589
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yue Shaozhong¹^ORCID,Zheng Xuefeng¹^ORCID,Zhang Fang¹^ORCID,Hong Yuehua¹^ORCID,Wang Yingzhe¹,Zhu Tian¹^ORCID,Gong Sunyan¹^ORCID,Wang Xiaohu¹,Lv Ling¹^ORCID,Cao Yanrong²^ORCID,Zhang Weidong³^ORCID,Zhang Jianfu³^ORCID,Ma Xiaohua¹^ORCID,Hao Yue¹^ORCID

Affiliation:

1. State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi’an, China

2. School of Mechano-Electronic Engineering, Xidian University, Xi’an, China

3. School of Engineering, Liverpool John Moores University, Liverpool, U.K.

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

National Innovation Center of Radiation Application

State Key Laboratory of Nuclear Physics and Technology, Peking University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10609410/10582887.pdf?arnumber=10582887

Reference32 articles.

1. Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1−x)2O3 thin films on m-plane sapphire substrates

2. High-Mobility MOCVD β-Ga₂O₃ Epitaxy with Fast Growth Rate Using Trimethylgallium

3. Electrical compensation by Ga vacancies in Ga2O3 thin films

4. Optical signatures of deep level defects in Ga2O3

5. Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Single-event burnout in β-Ga2O3 Schottky barrier diode induced by high-energy proton;Applied Physics Letters;2024-08-26

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3