Optical signatures of deep level defects in Ga2O3

Author:

Gao Hantian1ORCID,Muralidharan Shreyas2,Pronin Nicholas2,Karim Md Rezaul2ORCID,White Susan M.3ORCID,Asel Thaddeus1ORCID,Foster Geoffrey1ORCID,Krishnamoorthy Sriram2ORCID,Rajan Siddharth2,Cao Lei R.3,Higashiwaki Masataka4,von Wenckstern Holger5ORCID,Grundmann Marius5ORCID,Zhao Hongping2,Look David C.6,Brillson Leonard J.12ORCID

Affiliation:

1. Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA

2. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

3. Nuclear Reactor Laboratory, The Ohio State University, Columbus, Ohio 43210, USA

4. National Institute of Information Communications Technology, Koganei, Tokyo 184-8795, Japan

5. Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, D-04103 Leipzig, Germany

6. Semiconductor Research Center, Wright State University, Dayton, Ohio 45435, USA

Funder

Division of Materials Research

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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