Ga2O3films for electronic and optoelectronic applications-Reference-Cited by-同舟云学术

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Ga2O3films for electronic and optoelectronic applications

Published:1995-01-15 Issue:2 Volume:77 Page:686-693
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Passlack M.,Schubert E. F.,Hobson W. S.,Hong M.,Moriya N.,Chu S. N. G.,Konstadinidis K.,Mannaerts J. P.,Schnoes M. L.,Zydzik G. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.359055

Reference24 articles.

1. The advanced unified defect model for Schottky barrier formation

2. Epitaxial growth of alkaline earth fluoride films on HF‐treated Si and (NH4)2Sx‐treated GaAs withoutinsitucleaning

3. Improved electronic properties of GaAs surfaces stabilized with phosphorus

4. Surface structure of selenium‐treated GaAs (001) studied by field ion scanning tunneling microscopy

5. P2S5passivation of GaAs surfaces for scanning tunneling microscopy in air

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2. Effect of substrate temperature on structural, morphological, and optical properties of Gallium Oxide thin films deposited by RF-Sputtering;Gazi University Journal of Science;2024-09-01

3. Gallium Oxide‐Based Field Effect Transistors;physica status solidi (a);2024-07-17

4. Surface passivation of silicon substrate by ternary GaxCeyOz layers grown via combination of forming gas and oxygen at different temperatures;Ceramics International;2024-07

5. Improvements in Resistive and Capacitive Switching Behaviors in Ga2O3 Memristors via High-Temperature Annealing Process;Materials;2024-06-04

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