Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1−x)2O3 thin films on m-plane sapphire substrates
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
2. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA
Funder
AFOSR
NSF
SRC
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0065087
Reference55 articles.
1. Polymorphism of Ga2O3 and the System Ga2O3—H2O
2. Heteroepitaxy of Corundum-Structured α-Ga2O3Thin Films on α-Al2O3Substrates by Ultrasonic Mist Chemical Vapor Deposition
3. Guest Editorial: The dawn of gallium oxide microelectronics
4. High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth
5. MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties
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