Electrical compensation by Ga vacancies in Ga2O3 thin films
Author:
Affiliation:
1. Department of Applied Physics, Aalto University, 00076 Aalto, Finland
2. Leibniz Institute for Crystal Growth, 12489 Berlin, Germany
Funder
Suomen Akatemia (Academy of Finland)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4922814
Reference22 articles.
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4. Homoepitaxial growth of β-Ga2O3layers by halide vapor phase epitaxy
5. Deep-ultraviolet transparent conductive β-Ga2O3 thin films
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