The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs-Reference-Cited by-同舟云学术

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The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs

Published:2012-05 Issue:5 Volume:59 Page:1393-1401
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Xiao-Dong,Hu Wei-Da,Chen Xiao-Shuang,Lu Wei

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6186852/06170551.pdf?arnumber=6170551

Cited by 165 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Investigation of DC and RF Characteristics of AlGaN/GaN HEMT With Various Planar Distributed Channel Division;IEEE Transactions on Electron Devices;2024-08

4. Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces;Advanced Electronic Materials;2024-07-08

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