Author:
Panda Shwetapadma,Dora Kshirabdhee T,Panda Ajit K,Sahu Trinath
Abstract
Abstract
We analyze the electron mobility μ of GaN/AlGaN based quantum well (QW) transistor structure. We consider the potential profile V(z) by including the potential due topolarization (V
p
) and Hartree potential (V
H
) owing to surface electron density N
s
. The low temperature mobility is governed by the alloy disorder (ad-) and interface roughness (ir-) scatterings. As N
s
increases, μ increases. However, for larger N
s
(N
s
> 0.6 × 1013 cm−2), there is a deviation showing decreasing trend of μ. We show that the ad- scattering plays a vital role in governing μ. An increase in N
s
causes narrowing of the polarization induced channel potential through V
H
and hence facilitates the larger extension of the subband wave function into the surface barrier. Accordingly, the ad-scattering increases, thereby reducing μ. we show that with an increase in well width there is a substantial rise in μ in quantum well (QW) structures while almost no change in μ in double heterostructures (DH). Enhancement of height of the barriers leads to different results, i.e., for the back barrier, there is a reduction in μ in both QW and DH structures, while for the surface barrier, there is a rise in μ. The fascinating trends of our results of μ in different GaN/AlGaN structures elucidate the importance of ad-scattering on low temperature μ.
Funder
Science and Engineering Research Board
DST
Govt. of India
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Cited by
1 articles.
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