Growth of AlxGa1-xN/InyGa1-yN hetero structure on AlN/sapphire templates exhibiting Shubnikov-de Haas oscillation-Reference-Cited by-同舟云学术

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Growth of AlxGa1-xN/InyGa1-yN hetero structure on AlN/sapphire templates exhibiting Shubnikov-de Haas oscillation

Published:2021-11 Issue: Volume:574 Page:126324
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sumiya Masatomo,Takahara Yuki,Alghamdi Amira,Nakayama Yoshiko,Uesugi Fumihiko,Harada Yoshitomo^ORCID,Uedono Akira^ORCID,Imanaka Yasutaka^ORCID

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference36 articles.

1. Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE;Sakai;J. Crys. Growth,2002

2. M. Miyoshi, H. Ishikawa, T. Egawa, K. Asai, M. Mouri, T. Shibata, and O. Oda, Appl. Phys. Lett. 85 (2004) 710. High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy.

3. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency;Takano;Appl. Phys. Express,2017

4. Annealing of an AlN buffer layer in N2-CO for growth of a high-quality AlN film on sapphire;Miyake;Appl. Phys. Express,2016

5. Influence of thin MOCVD-grown GaN layer on underlyaing AlN template;Sumiya;J. Crys. Growth,2020

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