AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3651495
Reference18 articles.
1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
2. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
3. Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire
4. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
5. Mechanism of radio-frequency current collapse in GaN–AlGaN field-effect transistors
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2. Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation;Journal of Alloys and Compounds;2016-02
3. The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation;physica status solidi (b);2015-04-28
4. Novel Analytical model for current-voltage characteristics and transconductance of undoped AlGaN/GaN MISHFETs and performance comparison with different high-k dielectrics;IOP Conference Series: Materials Science and Engineering;2015-02-17
5. Effect of AlN growth temperature on trap densities ofin-situmetal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors;AIP Advances;2012-06
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