The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation-Reference-Cited by-同舟云学术

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The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation

Published:2015-04-28 Issue:9 Volume:252 Page:1960-1965
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Ardali S.¹,Atmaca G.²,Lisesivdin S. B.²,Malin T.³,Mansurov V.³,Zhuravlev K.³⁴,Tiras E.¹

Affiliation:

1. Department of Physics; Faculty of Science; Anadolu University; Yunus Emre Campus Eskisehir 26470 Turkey

2. Faculty of Science; Department of Physics; Gazi University; Teknikokullar Ankara 06500 Turkey

3. Institute of Semiconductor Physics of Siberian Branch of Russian Academy of Sciences; Acad. Lavrentiev ave 13 Novosibirsk 630090 Russia

4. Novosibirsk State University; 2, Pirogov Street Novosibirsk 630090 Russia

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201552135/fullpdf

Reference31 articles.

1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

2. High-power AlGaN/GaN HEMTs for Ka-band applications

3. 30-W/mm GaN HEMTs by Field Plate Optimization

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