Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire-Reference-Cited by-同舟云学术

Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire

Published:2000-04 Issue:7 Volume:87 Page:3375-3380
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dimitrov R.,Murphy M.,Smart J.,Schaff W.,Shealy J. R.,Eastman L. F.,Ambacher O.,Stutzmann M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.372353

Reference23 articles.

1. Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

2. High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors

3. High performance GaN/AlGaN MODFETs grown by RF-assisted MBE

4. GaN microwave electronics

5. High Al-content AlGaN/GaN MODFETs for ultrahigh performance

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