Effect of AlN growth temperature on trap densities ofin-situmetal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors-Reference-Cited by-同舟云学术

Effect of AlN growth temperature on trap densities ofin-situmetal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors

Published:2012-06 Issue:2 Volume:2 Page:022134
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Freedsman Joseph J.,Kubo Toshiharu,Egawa Takashi

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4722642

Reference27 articles.

1. Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

2. Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

3. Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis

4. AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped $\hbox{TiO}_{2}$ as a Gate Dielectric

5. Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metal‐Organic Chemical Vapor Deposition Grown Low‐Temperature Aluminum Nitride Gate Dielectric for Gallium Nitride on Si High Electron Mobility Transistor;physica status solidi (a);2024-07-21

2. Suppression of current dispersion in AlGaN/GaN MISHFETs with in-situ AlN passivation layer;Solid-State Electronics;2021-04

3. Improved interface state density by low temperature epitaxy grown AlN for AlGaN/GaN metal-insulator-semiconductor diodes;Materials Science and Engineering: B;2020-12

4. Demonstration of AlGaN/GaN MISHEMT on Si with Low-Temperature Epitaxy Grown AlN Dielectric Gate;Electronics;2020-11-05

5. The variation of temperature-dependent carrier concentration and mobility in AlGaN/AlN/GaN heterostructure with SiN passivation;physica status solidi (b);2015-04-28