Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation-Reference-Cited by-同舟云学术

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Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation

Published:2016-02 Issue: Volume:659 Page:90-94
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Atmaca G.,Ardali S.,Narin P.,Kutlu E.,Lisesivdin S.B.,Malin T.,Mansurov V.,Zhuravlev K.,Tiras E.

Funder

TUBITAK

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference33 articles.

1. In situ SiN passivation of AlGaN/GaN HEMTs by molecular beam epitaxy

2. The effects of GaN capping layer thickness on two-dimensional electron mobility in GaN/AlGaN/GaN heterostructures

3. AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor with an in-situ AlN cap layer

4. Recent advances on dielectrics technology for SiC and GaN power devices

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of AlN interlayer on AlGaN/GaN heterostructures grown by metal organic chemical vapour deposition;Materials Chemistry and Physics;2021-02

2. Through-layer XPS investigations of the Si3 N4 /AlGaN interface;physica status solidi (b);2016-07-18

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