Investigation of the band offsets caused by thin Al2O3 layers in HfO2 based Si metal oxide semiconductor devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3684939
Reference22 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Band offsets and work function control in field effect transistors
3. Near band edge Schottky barrier height modulation using high-κ dielectric dipole tuning mechanism
4. Metal/III-V effective barrier height tuning using atomic layer deposition of high-κ/high-κ bilayer interfaces
5. Dual high-/spl kappa/ gate dielectric with poly gate electrode: HfSiON on nMOS and Al/sub 2/O/sub 3/ capping layer on pMOS
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