Interface optimization of La-based gate dielectric for molybdenum disulfide field-effect transistors

Author:

Yang Kun,Wang Shulong,Han Tao,Liu Hongxia

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference52 articles.

1. Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices;Li;Nat. Electron.,2019

2. Graphene and two-dimensional materials for silicon technology;Akinwande;Nature,2019

3. 2015 International Technology Roadmap for Semiconductors (ITRS). Available: http://www.semiconductors.org/resources/2015-international-technology-roadmap-for-semiconductors-itrs/.

4. Electronics based on two-dimensional materials;Fiori;Nat. Nanotechnol.,2014

5. Heterostructures based on two-dimensional layered materials and their potential applications;Li;Mater. Today,2016

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