Author:
Coss B. E.,Loh W.-Y.,Wallace R. M.,Kim J.,Majhi P.,Jammy R.
Subject
Physics and Astronomy (miscellaneous)
Reference14 articles.
1. Recent advances in Schottky barrier concepts
2. Overview and status of metal S/D Schottky-barrier MOSFET technology
3. Electron tunneling and contact resistance of metal-silicon contact barriers
4. A New Route to Zero-Barrier Metal Source/Drain MOSFETs
5. M. Kobayashi, A. Kinoshita, K. Saraswat, H.S. P. Wong, and Y. Nishi, Fermi-level depinning in metal/Ge Schottky junction and its application to metal source/drain Ge NMOSFET, 2008 Symposium on VLSI Technology (IEEE Society, New York, 2008), p. 54.
Cited by
46 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献