Atomic Layer Deposited Bilayers and the Influence on Metal-Insulator-Semiconductor Schottky Barriers
Author:
Affiliation:
1. Lehigh University,Bethlehem,PA,United States,18015
Funder
National Science Foundation CBET program
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9938432/9938453/09938608.pdf?arnumber=9938608
Reference37 articles.
1. Understanding of binding energy calibration in XPS of lanthanum oxide by in situ treatment
2. Effects of La2O3 Capping Layers Prepared by Different ALD Lanthanum Precursors on Flatband Voltage Tuning and EOT Scaling in TiN/HfO2/SiO2/Si MOS Structures
3. Improving the electrical characteristics of MOS transistors with CeO2/La2O3 stacked gate dielectric
4. Charged defects reduction in gate insulator with multivalent materials;kouda;Symp VLSI Technology Dig Tech Papers,2009
5. La2O3 catalysts with diverse spatial dimensionality for oxidative coupling of methane to produce ethylene and ethane
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1. Dependence of the Metal–Insulator–Semiconductor Schottky Barrier Height on Insulator Composition;ACS Applied Electronic Materials;2024-01-18
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