Investigation of an anomalous hump phenomenon in via-type amorphous In-Ga-Zn-O thin-film transistors under positive bias temperature stress-Reference-Cited by-同舟云学术

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Investigation of an anomalous hump phenomenon in via-type amorphous In-Ga-Zn-O thin-film transistors under positive bias temperature stress

Published:2017-04-03 Issue:14 Volume:110 Page:143508
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yang Jianwen¹,Liao Po-Yung²,Chang Ting-Chang²^ORCID,Chen Bo-Wei³,Huang Hui-Chun⁴,Su Wan-Ching⁴,Chiang Hsiao-Cheng⁴,Zhang Qun¹

Affiliation:

1. Department of Materials Science, National Engineering Laboratory for TFT-LCD Materials and Technologies, Fudan University, Shanghai 200433, China

2. Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan

3. Department of Photonics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan

4. Department of Material and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4979870

Reference27 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors

3. Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors

4. Asymmetric structure-induced hot-electron injection under hot-carrier stress in a-InGaZnO thin film transistor

5. High-mobility amorphous In2O3–10wt%ZnO thin film transistors

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3. 4 inch Gallium Oxide Field‐Effect Transistors Array with High‐k Ta₂O₅ as Gate Dielectric by Physical Vapor Deposition;physica status solidi (RRL) – Rapid Research Letters;2024-05-10

4. Investigating an abnormal hump phenomenon in top gate a-InGaZnO thin-film transistors due to mobile sodium diffusion;Scientific Reports;2023-08-22

5. Significant Degradation Reduction in Metal Oxide Thin-Film Transistors via the Interaction of Ionized Oxygen Vacancy Redistribution, Self-Heating Effect, and Hot Carrier Effect;IEEE Transactions on Electron Devices;2023-08

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