Asymmetric structure-induced hot-electron injection under hot-carrier stress in a-InGaZnO thin film transistor-Reference-Cited by-同舟云学术

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Asymmetric structure-induced hot-electron injection under hot-carrier stress in a-InGaZnO thin film transistor

Published:2013-09-30 Issue:14 Volume:103 Page:143508
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tsai Ming-Yen,Chang Ting-Chang,Chu Ann-Kuo,Chen Te-Chih,Hsieh Tien-Yu,Lin Kun-Yao,Tsai Wu-Wei,Chiang Wen-Jen,Yan Jing-Yi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4824329

Reference15 articles.

1. Developments in nanocrystal memory

2. Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

3. Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

4. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

5. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

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1. Bilayer channel structure to improve the stability of solution-processed metal oxide transistors under AC stress;Materials Science in Semiconductor Processing;2024-03

2. Asymmetric Electrode Structure Induces Dual-Channel Phenomenon Under Hot-Carrier Stress in Organic Thin-Film Transistors;IEEE Electron Device Letters;2023-09

3. Hot Carrier Degradation Accompanied by Recovery in InSnZnO Thin-Film Transistors;IEEE Electron Device Letters;2023-07

4. Solution-processed amorphous zinc indium tin oxide thin-film transistors with high stability under AC stress;Journal of Materials Chemistry C;2023

5. A Stacked p‐Type Low‐Temperature Polycrystalline Silicon Thin‐Film Transistor for Future Display Applications;Advanced Materials Technologies;2022-07-07

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