Asymmetric Electrode Structure Induces Dual-Channel Phenomenon Under Hot-Carrier Stress in Organic Thin-Film Transistors-Reference-Cited by-同舟云学术

Asymmetric Electrode Structure Induces Dual-Channel Phenomenon Under Hot-Carrier Stress in Organic Thin-Film Transistors

Published:2023-09 Issue:9 Volume:44 Page:1496-1499
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tu Yu-Fa¹^ORCID,Huang Jen-Wei²^ORCID,Chang Ting-Chang³^ORCID,Hung Yang-Hao⁴,Lu I-Nien⁵,Zhou Kuan-Ju⁴,Sun Li-Chuan⁶^ORCID,Chen Yu-An⁴,Wu Chia-Chuan⁷,Hung Wei-Chieh⁴,Lee Jason⁸,Lien Chen-Hsin¹

Affiliation:

1. Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan

2. Department of Physics, Republic of China Military Academy, Kaohsiung, Taiwan

3. Department of Physics, Center of Crystal Research, College of Semiconductor and Advanced Technology Research, National Sun Yat-sen University, Kaohsiung, Taiwan

4. Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan

5. Department of Photonics, National Sun Yat-sen University, Kaohsiung, Taiwan

6. Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung, Taiwan

7. Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan

8. Department of Computer Science, Boston University, Boston, MA, USA

Funder

National Science and Technology Council in Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

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