Hot Carrier Degradation Accompanied by Recovery in InSnZnO Thin-Film Transistors-Reference-Cited by-同舟云学术

Hot Carrier Degradation Accompanied by Recovery in InSnZnO Thin-Film Transistors

Published:2023-07 Issue:7 Volume:44 Page:1124-1127
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhang Meng¹^ORCID,Jiang Zhendong¹,Deng Sunbin²^ORCID,Chen Zhiying¹^ORCID,Ma Xiaotong¹,Tien Ching-Ho³^ORCID,Chen Lung-Chien³^ORCID,Wong Man²^ORCID,Kwok Hoi-Sing²

Affiliation:

1. College of Electronics and Information Engineering, Shenzhen University, Shenzhen, China

2. State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Hong Kong, China

3. Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei, Taiwan

Funder

Shenzhen Municipal Research Program

ITF of Hong Kong

NTUT–SZU Joint Research Program

Basic and Applied Basic Research Foundation of Guangdong Province

NSFC

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10168002/10129004.pdf?arnumber=10129004

Reference40 articles.

1. 53.1: Development of Oxide-TFT OLED-TV Technologies

2. Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

3. Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering

4. Electronic Defects in Amorphous Oxide Semiconductors: A Review

5. Hot Carrier Effects in Low-Temperature Polysilicon Thin-Film Transistors

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