Reliability of indium-tin-zinc-oxide thin-film transistors under dynamic drain voltage stress-Reference-Cited by-同舟云学术

Reliability of indium-tin-zinc-oxide thin-film transistors under dynamic drain voltage stress

Published:2024-07-08 Issue:2 Volume:125 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Zhu Guanming¹²^ORCID,Chen Zhiying²^ORCID,Zhang Meng¹²^ORCID,Lu Lei³^ORCID,Deng Sunbin⁴^ORCID,Wong Man⁴^ORCID,Kwok Hoi-Sing⁴^ORCID

Affiliation:

1. Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University 1 , Shenzhen 518060, China

2. College of Electronics and Information Engineering, Shenzhen University 2 , Shenzhen 518060, China

3. School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University 3 , Shenzhen 518055, China

4. State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology 4 , Hong Kong, China

Abstract

In this Letter, the reliability of indium-tin-zinc-oxide thin-film transistors (TFTs) under dynamic drain voltage stress is investigated. A degradation phenomenon, associated with both pulse rising time (tr) and falling time, is observed. Through the technology computer-aided design simulation and recovery experiment, it is discovered that the tr-dependent dynamic hot carrier effect and integral voltage-dependent electron detrapping jointly affect the device's reliability. Finally, an AC degradation model in indium-tin-zinc oxide TFTs, considering the non-equilibrium junction, hot carrier injection, and recovery, was proposed.

Funder

Shenzhen Municipal Research Program

National Natural Science Foundation of China

Innovation and Technology Fund of Hong Kong

National Taipei University of Technology - Shenzhen Universtiy Joint Research Program

Independent Scientific Research Program from State Key Laboratory of Radio Frequency Heterogeneous Integration

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0213509/20041285/023505_1_5.0213509.pdf

Reference39 articles.

1. Fully Transparent and Highly Sensitive pH Sensor Based on an a-IGZO Thin-Film Transistor with Coplanar Dual-Gate on Flexible Polyimide Substrates

2. An Active Multielectrode Array for Collecting Surface Electromyogram Signals Using a-IGZO TFT Technology on Polyimide Substrate

3. Advances in mobility enhancement of ITZO thin-film transistors: a review

4. Temperature-Dependent Instability of Bias Stress in InGaZnO Thin-Film Transistors

5. Self-heating enhanced charge trapping effect for InGaZnO thin film transistor