Hot Carrier Degradation Reduction in Metal Oxide Thin-Film Transistors by Implementing a Lightly Doped Drain-Like Structure-Reference-Cited by-同舟云学术

Hot Carrier Degradation Reduction in Metal Oxide Thin-Film Transistors by Implementing a Lightly Doped Drain-Like Structure

Published:2024-09 Issue:9 Volume:45 Page:1602-1605
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhu Guanming¹,Zhang Meng¹^ORCID,Lu Lei²^ORCID,Wong Man³^ORCID,Kwok Hoi-Sing³^ORCID

Affiliation:

1. State Key Laboratory of Radio Frequency Heterogeneous Integration and the College of Electronics and Information Engineering, Shenzhen University, Shenzhen, China

2. School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen, China

3. State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Hong Kong, China

Funder

Shenzhen Municipal Research Program

National Natural Science Foundation of China

Innovation and Technology Fund of Hong Kong

National Taipei University of Technology - Shenzhen University Joint Research Program

Independent Scientific Research Program from State Key Laboratory of Radio Frequency Heterogeneous Integration

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/55/10648890/10587316.pdf?arnumber=10587316

Reference36 articles.

1. An Active Multielectrode Array for Collecting Surface Electromyogram Signals Using a-IGZO TFT Technology on Polyimide Substrate

2. A high-reliability scan driver integrated circuit by MO TFTs for a foldable display

3. Low-temperature metal–oxide thin-film transistor technologies for implementing flexible electronic circuits and systems

4. Monolithic Integration of Perovskite Photoabsorbers with IGZO Thin‐Film Transistor Backplane for Phototransistor‐Based Image Sensor

5. Fully Transparent and Highly Sensitive pH Sensor Based on an a-IGZO Thin-Film Transistor with Coplanar Dual-Gate on Flexible Polyimide Substrates