Solution-processed amorphous zinc indium tin oxide thin-film transistors with high stability under AC stress-Reference-Cited by-同舟云学术

Solution-processed amorphous zinc indium tin oxide thin-film transistors with high stability under AC stress

Published:2023 Issue:39 Volume:11 Page:13395-13402
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Ho Dongil¹,Jeong Hyewon¹,Park Hun-Bum²,Park Sung Kyu²^ORCID,Kim Myung-Gil³^ORCID,Kim Choongik¹^ORCID

Affiliation:

1. Department of Chemical and Biomolecular Engineering, Sogang University, 35 Baekbom-ro, Mapo-gu, Seoul 04107, Republic of Korea

2. School of Electrical and Electronics Engineering, Chung-Ang University, 84 Heukseok-ro, Dongjak-gu, Seoul 06974, Republic of Korea

3. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea

Abstract

Amorphous zinc–indium–tin oxide thin-film transistors with various Zn : In : Sn ratios are investigated to improve AC stress stability by suppressing hot carrier effects in the channel layer.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC02439C

Reference56 articles.

1. Liquid crystal display and organic light-emitting diode display: present status and future perspectives

2. Flexible and Stretchable Smart Display: Materials, Fabrication, Device Design, and System Integration

3. Flexible low-temperature polycrystalline silicon thin-film transistors

4. Material characteristics and applications of transparent amorphous oxide semiconductors

5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bilayer channel structure to improve the stability of solution-processed metal oxide transistors under AC stress;Materials Science in Semiconductor Processing;2024-03

2. Reliability issues of amorphous oxide semiconductor-based thin film transistors;Journal of Materials Chemistry C;2024