Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors-Reference-Cited by-同舟云学术

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Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors

Published:2014-03-31 Issue:13 Volume:104 Page:133503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Kuan-Hsien,Chang Ting-Chang,Wu Ming-Siou,Hung Yi-Syuan,Hung Pei-Hua,Hsieh Tien-Yu,Chou Wu-Ching,Chu Ann-Kuo,Sze Simon M.,Yeh Bo-Liang

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4868430

Reference30 articles.

1. Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells

2. Developments in nanocrystal memory

3. Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

4. Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

5. Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions

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1. Ultrafast (50 ns) I_D –V_G Analysis on Oxide Thin-Film Transistors With Morphotropic Phase Boundary State High-κ Gate Insulator;IEEE Transactions on Electron Devices;2024-05

2. Gate bias stress reliability of a-InGaZnO TFTs under various channel dimension;Microelectronics Reliability;2024-02

3. A Comprehensive Large Signal, Small Signal, and Noise Model for IGZO Thin Film Transistor Circuits;IEEE Transactions on Electron Devices;2023-09

4. Effects of Oxygen Content on Output Characteristics of IGZO TFTs under High Current Driving Conditions;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2023-02-28

5. Impact of electrode materials on the performance of amorphous IGZO thin-film transistors;MRS Advances;2022-06-15

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