Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors-Reference-Cited by-同舟云学术

Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors

Published:2014-03-10 Issue:10 Volume:104 Page:103501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Kuan-Hsien,Chang Ting-Chang,Chang Kuan-Chang,Tsai Tsung-Ming,Hsieh Tien-Yu,Chen Min-Chen,Yeh Bo-Liang,Chou Wu-Ching

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4863682

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1. Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells

2. Developments in nanocrystal memory

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4. Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

5. Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

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