Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors-Reference-Cited by-同舟云学术

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Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

Published:2014-12 Issue:12 Volume:4 Page:127101
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Naresh-Kumar G.¹,Vilalta-Clemente A.²,Pandey S.³,Skuridina D.⁴,Behmenburg H.⁵,Gamarra P.⁶,Patriarche G.⁷,Vickridge I.⁸,di Forte-Poisson M. A.⁶,Vogt P.⁴,Kneissl M.⁴,Morales M.²,Ruterana P.²^ORCID,Cavallini A.³,Cavalcoli D.³,Giesen C.⁵,Heuken M.⁵,Trager-Cowan C.¹

Affiliation:

1. Dept of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, UK

2. CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN 14050 Caen Cedex, France

3. Dipartimento di Fisica Astronomia, Università di Bologna, 40127 Bologna, Italy

4. Institute of Solid State Physics, Technical University Berlin, 10623 Berlin, Germany

5. AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath, Germany

6. Thales Research and Technology, III-V Lab, 91460 Marcoussis, France

7. LPN, Route de Nozay, 91460 Marcoussis, France

8. Institut des NanoSciences, Université Pierre et Marie Curie, 75015 Paris, France

Funder

Engineering and Physical Sciences Research Council (EPSRC)

European Commission (EC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/4/12/1.4903227.pdf?itemId=/content/aip/journal/adva/4/12/10.1063/1.4903227&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference43 articles.

1. Current status of AlInN layers lattice-matched to GaN for photonics and electronics

2. Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

3. InAlN/(In)GaN high electron mobility transistors: some aspects of the quantum well heterostructure proposal

4. Threshold voltage control of InAlN/GaN heterostructure field-effect transistors for depletion- and enhancement-mode operation

5. High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

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1. Effect of InGaN Channel on Radio‐Frequency Performance in High‐Electron‐Mobility Transistors with an InAlGaN Barrier;physica status solidi (a);2022-05-29

2. Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures;Materials;2022-01-31

3. Alloy disorder limited mobility of InGaN two-dimensional electron gas;Applied Physics Letters;2018-06-25

4. Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT;physica status solidi (a);2018-04-03

5. High-Performance LPCVD-SiNx/InAlGaN/GaN MIS-HEMTs With 850-V 0.98-$\text{m}{\Omega} \cdot$ cm2 for Power Device Applications;IEEE Journal of the Electron Devices Society;2018

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