Alloy disorder limited mobility of InGaN two-dimensional electron gas
Author:
Affiliation:
1. Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
Funder
Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5030992
Reference38 articles.
1. Design of high electron mobility devices with composite nitride channels
2. Beyond the AlGaN/GaN HEMT: new concepts for high-speed transistors
3. Power electronics on InAlN/(In)GaN: Prospect for a record performance
4. High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures
5. 300-GHz InAlN/GaN HEMTs With InGaN Back Barrier
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