Carrier localization in III-nitride versus conventional III-V semiconductors: A study on the effects of alloy disorder using landscape theory and the Schrödinger equation-Reference-Cited by-同舟云学术

Carrier localization in III-nitride versus conventional III-V semiconductors: A study on the effects of alloy disorder using landscape theory and the Schrödinger equation

Published:2023-10-26 Issue:4 Volume:20 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Tsai Tsung-Yin,Qwah Kai Shek^ORCID,Banon Jean-Philippe^ORCID,Filoche Marcel^ORCID,Weisbuch Claude^ORCID,Wu Yuh-Renn^ORCID,Speck James S.

Funder

Collaborative Research in Engineering, Science and Technology

Simons Foundation

Air Force Office of Scientific Research

National Science Foundation

Sandia National Laboratory

French National Research Agency

Ministry of Science and Technology, Taiwan

RAISE program

TECCLON

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.20.044069/fulltext

Reference32 articles.

1. Recent advances in long-wavelength semiconductor lasers for optical fiber communication

2. A Ga0.47In0.53As/InP heterophotodiode with reduced dark current

3. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

4. Demonstration of high efficiency cascaded blue and green micro-light-emitting diodes with independent junction control

5. Disorder effects in nitride semiconductors: impact on fundamental and device properties

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3. Carrier localization in III-nitride versus conventional III-V semiconductors: A study on the effects of alloy disorder using landscape theory and the Schrödinger equation;Physical Review Applied;2023-10-26