Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. T. Palacios, E. Snow, Y. Pei, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra, Ge-spacer Technology in AlGaN/GaN HEMTs for mm-Wave Applications, International Electron Device Meeting, IEDM-2005, Washington, December 5-7, 2005. Late news paper.
2. High-power AlGaN/GaN HEMTs for Ka-band applications
3. J. W. Chung, E. Piner, and T. Palacios, N-face GaN/AlGaN Transistors Through Substrate Removal, 66th Device Research Conference, University of California, Santa Barbara, June 2008.
4. O. I. Saadat, J. Chung, and T. Palacios, Gate-first GaN HEMT Technology for High Frequency and High Temperature Applications, International Workshop on Nitride Semiconductors, 2008.
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