InN: Breaking the limits of solid-state electronics-Reference-Cited by-同舟云学术

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InN: Breaking the limits of solid-state electronics

Published:2021-12-01 Issue:12 Volume:11 Page:125325
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Kuzmík J.¹^ORCID,Adikimenakis A.²,Ťapajna M.¹^ORCID,Gregušová D.¹^ORCID,Haščík Š.¹,Dobročka E.¹,Tsagaraki K.²,Stoklas R.¹^ORCID,Georgakilas A.²³

Affiliation:

1. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravska cesta 9, 84104 Bratislava, Slovakia

2. Microelectronics Research Group (MRG), IESL, FORTH, P.O. Box 1385, 71110 Heraklion, Greece

3. Department of Physics, University of Crete, 71203 Heraklion, Greece

Funder

Vedecká Grantová Agentúra MŠVVaŠ SR a SAV

Hellenic Foundation for Research and Innovation

H2020

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0066340

Reference38 articles.

1. See https://irds.ieee.org/images/files/pdf/2017/2017IRDS_MM.pdf for information on IRDS roadmap.

2. The 2017 terahertz science and technology roadmap

3. A 1.8-THz quantum cascade laser operating significantly above the temperature of ℏω/kB

4. InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications

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1. InN/InAlN heterostructures for new generation of fast electronics;Journal of Applied Physics;2024-06-25

2. Computational Fluid Dynamic Analysis of a High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) Reactor for Flow Stability;Crystals;2024-01-23

3. Probing the charge state of threading dislocations in indium nitride through advanced atomic force microscopy;Materials Characterization;2023-11

4. Thermal decomposition of trimethylindium and indium trisguanidinate precursors for InN growth: An ab initio and kinetic modeling study;The Journal of Chemical Physics;2023-05-05

5. Mg Doping of N-Polar, In-Rich InAlN;Materials;2023-03-10

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