Probing the charge state of threading dislocations in indium nitride through advanced atomic force microscopy-Reference-Cited by-同舟云学术

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Probing the charge state of threading dislocations in indium nitride through advanced atomic force microscopy

Published:2023-11 Issue: Volume:205 Page:113279
ISSN:1044-5803
Container-title:Materials Characterization
language:en
Short-container-title:Materials Characterization

Author:

Loo Chin Chyi,Ng Sha Shiong,Yu Hung Wei,Chang Edward Yi,Dee Chang Fu,Chang Wei Sea

Funder

CREST

Taiwan Ministry of Science and Technology

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference79 articles.

1. Band gap of hexagonal InN and InGaN alloys;Davydov;Phys. Status Solidi B,2002

2. Unusual properties of the fundamental band gap of InN;Wu;Appl. Phys. Lett.,2002

3. When group-III nitrides go infrared: new properties and perspectives;Wu;J. Appl. Phys.,2009

4. Near infrared electroluminescence from n-InN/p-GaN light-emitting diodes;Wu;Appl. Phys. Lett.,2012

5. Near infrared electroluminescence from p-NiO/n-InN/n-GaN light-emitting diode fabricated by PAMBE;Zhao;J. Lumin.,2017

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