Effect of InGaN Channel on Radio‐Frequency Performance in High‐Electron‐Mobility Transistors with an InAlGaN Barrier-Reference-Cited by-同舟云学术

Effect of InGaN Channel on Radio‐Frequency Performance in High‐Electron‐Mobility Transistors with an InAlGaN Barrier

Published:2022-05-29 Issue:14 Volume:219 Page:2200024
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Chen Ling¹²,Wang Kai¹³²,Shen Pei¹²,Fang Yi¹²,Liu Yuqi¹²,Wang Hong¹³²^ORCID

Affiliation:

1. Engineering Research Center for Optoelectronics of Guangdong Province School of Physics and Optoelectronics South China University of Technology Guangzhou 510640 China

2. Zhongshan Institute of Modern Industrial Technology South China University of Technology Zhonghan 528437l China

3. Guangdong Provincial Engineering Laboratory for Wide Bandgap Semiconductor Materials and Devices School of Electronics and Information Engineering South China University of Technology Guangzhou 510640 China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200024

Reference35 articles.

1. High Breakdown-Voltage GaN-Based HEMTs on Silicon With Ti/Al/Ni/Ti Ohmic Contacts

2. Trapping Effects on Leakage and Current Collapse in AlGaN/GaN HEMTs

3. High ${f}_{{T}}$ AlGa(In)N/GaN HEMTs Grown on Si With a Low Gate Leakage and a High ON/OFF Current Ratio

4. Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

5. Demonstration of undoped quaternary AlInGaN∕GaN heterostructure field-effect transistor on sapphire substrate

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