Recent progress of indium-bearing group-III nitrides and devices: a review-Reference-Cited by-同舟云学术

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Recent progress of indium-bearing group-III nitrides and devices: a review

Published:2024-09-12 Issue:9 Volume:56 Page:
ISSN:1572-817X
Container-title:Optical and Quantum Electronics
language:en
Short-container-title:Opt Quant Electron

Author:

He Yixun,Li Linhao,Xiao Jiaying,Liu Liwei,Li Guoqiang,Wang Wenliang

Funder

National Natural Science Foundation of China

Distinguished Youth Foundation of Guangdong Scientific Committee

Guangzhou Basic and Applied Basic Research Project

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s11082-024-07459-4.pdf

Reference206 articles.

1. Abboudi, H., EL Ghazi, H., En-nadir, R., Basyooni-M, M.A., Kabatas, A., Jorio, I.Z.: Efficiency of InN/InGaN/GaN intermediate-band solar cell under the effects of hydrostatic pressure in-compositions, built-in-electric field, confinement, and thickness. Nanomaterials 14, 104 (2024). https://doi.org/10.3390/nano14010104

2. Abdelhamid, M., Routh, E.L., Hagar, B., Bedair, S.M.: Improved LED output power and external quantum efficiency using InGaN templates. Appl. Phys. Lett. 120, 081104 (2022). https://doi.org/10.1063/5.0084273

3. Alonso-Orts, M., Hötzel, R., Grieb, T., Auf der Maur, M., Ries, M., Nippert, F., März, B., Müller-Caspary, K., Wagner, M.R., Rosenauer, A., Eickhoff, M.: Correlative analysis on InGaN/GaN nanowires: structural and optical properties of self-assembled short-period superlattices. Discover Nano 18, 27 (2023). https://doi.org/10.1186/s11671-023-03808-6

4. Auf der Maur, M., Moses, G., Gordon, J.M., Huang, X., Zhao, Y., Katz, E.A.: Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells. Energy Mater. Sol. Cells 230, 111253 (2021). https://doi.org/10.1016/j.solmat.2021.111253

5. Azmi, N.S., Mazlan, M.N., Taib, M.I.M., Ahmad, M.A., Samsuri, M.S.N., Mansor, M., Hisyam, M.I., Bakar, A.S.A., Zainal, N.: Impact of nucleation temperature on growth uniformity of GaN on 4-inch dome-patterned sapphire substrate. Mater. Sci. Semicond. Process. 173, 108177 (2024). https://doi.org/10.1016/j.mssp.2024.108177

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