Impact of nucleation temperature on growth uniformity of GaN on 4-inch dome-patterned sapphire substrate-Reference-Cited by-同舟云学术

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Impact of nucleation temperature on growth uniformity of GaN on 4-inch dome-patterned sapphire substrate

Published:2024-04 Issue: Volume:173 Page:108177
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Azmi Nor Syafiqah,Mazlan Muhammad Naim,Md Taib Mohd Ikram,Ahmad Mohd Anas,Samsuri Mohd Shahrul Nizam,Mansor Marwan,Hisyam Muhammad Iznul,Abu Bakar Ahmad Shuhaimi,Zainal Norzaini^ORCID

Funder

Ministry of Higher Education, Malaysia

Publisher

Elsevier BV

Reference43 articles.

1. GaN on sapphire substrates for visible light-emitting diodes;Ryou,2018

2. Design of patterned sapphire substrates for GaN-based light-emitting diodes;Wang;Chin. Phys. B,2015

3. Properties of GaN-based light-emitting diodes on patterned sapphire substrate coated with silver nanoparticles prepared by mask-free chemical etching;Chen;Nanoscale Res. Lett.,2013

4. Improved light extraction efficiency of GaN-based LEDs with patterned sapphire substrate and patterned ITO;Zhou;Opt Laser. Technol.,2012

5. Application of patterned sapphire substrate for III-nitride light-emitting diodes;Zhou;Nanoscale,2022

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent progress of indium-bearing group-III nitrides and devices: a review;Optical and Quantum Electronics;2024-09-12

2. Direct observation of the fracture process on C-plane sapphire by in-situ scratch tests;Journal of Materials Research and Technology;2024-07

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