Properties of GaN-based light-emitting diodes on patterned sapphire substrate coated with silver nanoparticles prepared by mask-free chemical etching
Author:
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/1556-276X-8-157.pdf
Reference13 articles.
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3. Guo X, Schubert EF: Current crowding in GaN/InGaN light emitting diodes on insulating substrates. J Appl Phys 2001, 90: 8.
4. Tadatomo K, Okagawa H, Ohuchi Y, Tsunekawa T, Imada Y, Kato M, Taguchi T: High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy. Jpn J Appl Phys 2001, 40: L583. 10.1143/JJAP.40.L583
5. Wang WK, Wuu DS, Lin SH, Huang SY, Wen KS, Horng RH: Growth and characterization of InGaN-based light-emitting diodes on patterned sapphire substrates. J Phys Chem Solids 2008, 69: 714–718. 10.1016/j.jpcs.2007.07.075
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