Author:
Alonso-Orts Manuel,Hötzel Rudolfo,Grieb Tim,Auf der Maur Matthias,Ries Maximilian,Nippert Felix,März Benjamin,Müller-Caspary Knut,Wagner Markus R.,Rosenauer Andreas,Eickhoff Martin
Abstract
AbstractThe influence of self-assembled short-period superlattices (SPSLs) on the structural and optical properties of InGaN/GaN nanowires (NWs) grown by PAMBE on Si (111) was investigated by STEM, EDXS, µ-PL analysis and k·p simulations. STEM analysis on single NWs indicates that in most of the studied nanostructures, SPSLs self-assemble during growth. The SPSLs display short-range ordering of In-rich and In-poor InxGa1-xN regions with a period of 2–3 nm that are covered by a GaN shell and that transition to a more homogenous InxGa1-xN core. Polarization- and temperature-resolved PL analysis performed on the same NWs shows that they exhibit a strong parallel polarized red-yellow emission and a predominantly perpendicular polarized blue emission, which are ascribed to different In-rich regions in the nanostructures. The correlation between STEM, µ-PL and k·p simulations provides better understanding of the rich optical emission of complex III-N nanostructures and how they are impacted by structural properties, yielding the significant impact of strain on self-assembly and spectral emission.
Graphical abstract
Funder
Central Research Development Fund, University of Bremen
Deutsche Forschungsgemeinschaft
Ministerium für Innovation, Wissenschaft und Forschung des Landes Nordrhein-Westfalen
Senatsverwaltung für Wirtschaft, Technologie und Forschung des Landes Berlin
German Bundesministerium für Bildung und Forschung
Universität Bremen
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献