Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap-Reference-Cited by-同舟云学术

Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap

Published:2016-10-17 Issue:16 Volume:109 Page:161103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nippert Felix¹^ORCID,Karpov Sergey Yu.²,Callsen Gordon¹,Galler Bastian³,Kure Thomas¹,Nenstiel Christian¹^ORCID,Wagner Markus R.¹^ORCID,Straßburg Martin³,Lugauer Hans-Jürgen³,Hoffmann Axel¹

Affiliation:

1. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany

2. STR Group–Soft-Impact Ltd., P.O. Box 83, 27 Engels av., 194156 St. Petersburg, Russia

3. OSRAM Opto Semiconductors GmbH, Leibnizstraße 4, 93055 Regensburg, Germany

Funder

Deutsche Forschungsgemeinschaft (DFG)

Seventh Framework Programme (FP7)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4965298

Reference45 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

3. On the origin of IQE-‘droop’ in InGaN LEDs

4. Efficiency droop in nitride-based light-emitting diodes

5. Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range

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