Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range-Reference-Cited by-同舟云学术

Realization of high-luminous-efficiency InGaN light-emitting diodes in the “green gap” range

Published:2015-06-03 Issue:1 Volume:5 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Jiang Yang,Li Yangfeng,Li Yueqiao,Deng Zhen,Lu Taiping,Ma Ziguang,Zuo Peng,Dai Longgui,Wang Lu,Jia Haiqiang,Wang Wenxin,Zhou Junming,Liu Wuming,Chen Hong

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep10883.pdf

Reference30 articles.

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3. Pimputkar, S. Speck, J. S. DenBaars, S. P. & Nakamura S. Prospects for LED lighting. Nature Photon. 3, 180–182 (2009).

4. Wierer, J. J. David, A. & Megens, M. M. III-nitride photonic-crystal light-emitting diodes with high extraction efficiency. Nature Photon. 3, 163–169 (2009).

5. Kim, J. K. et al. Light-extraction enhancement of GaInN light-emitting diodes by graded-refractive-index indium tin oxide anti-reflection contact. Adv. Mater. 20, 801–804 (2008).

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