Light-Extraction Enhancement of GaInN Light-Emitting Diodes by Graded-Refractive-Index Indium Tin Oxide Anti-Reflection Contact-Reference-Cited by-同舟云学术

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Light-Extraction Enhancement of GaInN Light-Emitting Diodes by Graded-Refractive-Index Indium Tin Oxide Anti-Reflection Contact

Published:2008-02-18 Issue:4 Volume:20 Page:801-804
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Kim J. K.,Chhajed S.,Schubert M. F.,Schubert E. F.,Fischer A. J.,Crawford M. H.,Cho J.,Kim H.,Sone C.

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference19 articles.

1. Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching

2. High index contrast mirrors for optical microcavities

3. Internal high-reflectivity omni-directional reflectors

4. Omnidirectional reflector using nanoporous SiO_2 as a low-refractive-index material

5. GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer

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