Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3138136
Reference11 articles.
1. III–V nitride based light-emitting devices
2. Growth of AlN/GaN layered structures by gas source molecular-beam epitaxy
3. Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer
4. Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice matched to GaN
5. High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN
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