Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT-Reference-Cited by-同舟云学术

Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT

Published:2018-04-03 Issue:11 Volume:215 Page:1700741
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Lumbantoruan Franky¹^ORCID,Wu Chia-Hsun¹,Zheng Xia-Xi¹,Singh Sankalp K.¹,Dee Chang-Fu²,Majlis Burhanuddin Y.²,Chang Edward-Yi¹³

Affiliation:

1. Department of Materials Science and Engineering, National Chiao-Tung University; Hsinchu 30010 Taiwan

2. Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia; Bangi 43600 Malaysia

3. International College of Semiconductor Technology, National Chiao-Tung University; Hsinchu 30010 Taiwan

Funder

Chung Shan Institute

NCTU UCB I-RiCE program

Ministry of Science and Technology, Taiwan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

2. Quaternary Barrier InAlGaN HEMTs With $f_{T}/f_{\max}$ of 230/300 GHz

3. 317 GHz InAlGaN/GaN HEMTs with extremely low on-resistance

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Current Density and Low Ron Quaternary InAlGaN MIS-HEMT on Si for Power Applications;ECS Journal of Solid State Science and Technology;2023-07-01

2. GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices;Semiconductor Science and Technology;2023-04-25

3. Interface State Density Modification and Dielectric Reliability Enhancement of ErTi_xO_y/Al₂O₃/InP Laminated Stacks;IEEE Transactions on Electron Devices;2023-04

4. Cryogenic investigation of the negative pinch-off voltage Vpinch-off, leakage current and interface defects in the Al0.22Ga0.78N/GaN/SiC HEMT;Microelectronics Reliability;2021-01

5. Evidence of Poole-frenkel and Fowler-Nordheim tunneling transport mechanisms in leakage current of (Pd/Au)/Al0.22Ga0.78N/GaN heterostructures;Solid State Communications;2020-07