Threshold voltage control of InAlN/GaN heterostructure field-effect transistors for depletion- and enhancement-mode operation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3446891
Reference15 articles.
1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
2. Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors
3. High transconductance enhancement-mode AlGaN∕GaN HEMTs on SiC substrate
4. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
5. Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate
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