Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies-Reference-Cited by-同舟云学术

Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies

Published:2018-10-14 Issue:14 Volume:124 Page:145703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Farzana Esmat¹^ORCID,Foronda Humberto M.²,Jackson Christine M.¹^ORCID,Razzak Towhidur¹^ORCID,Zhang Zeng¹^ORCID,Speck James S.²,Arehart Aaron R.¹^ORCID,Ringel Steven A.¹

Affiliation:

1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. Materials Department, University of California, Santa Barbara, California 93106, USA

Funder

Directorate for Engineering

Office of Naval Research

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5050949

Reference42 articles.

1. Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0.82In0.18N Grown on GaN

2. Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen

3. Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

4. Polarization Effects in Semiconductors

5. Photocapacitance spectroscopy of InAlN nearly lattice-matched to GaN

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